AOT66616L
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOT66616L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 140
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 42.5
nC
trⓘ -
Время нарастания: 15.5
ns
Cossⓘ - Выходная емкость: 940
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032
Ohm
Тип корпуса:
TO220
Аналог (замена) для AOT66616L
AOT66616L
Datasheet (PDF)
..1. Size:785K aosemi
aot66616l.pdf 
AOT66616L/AOB66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
7.1. Size:781K aosemi
aot66613.pdf 
AOT66613L/AOB66613LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
8.1. Size:390K aosemi
aot66620l.pdf 
AOT66620L/AOB66620LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
9.1. Size:840K aosemi
aot66920l.pdf 
AOT66920L/AOB66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.2. Size:381K aosemi
aot66811l.pdf 
AOT66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 120A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)
9.3. Size:370K aosemi
aot66919l.pdf 
AOT66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:374K aosemi
aot66518l.pdf 
AOT66518LTM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 120A (SOA) RDS(ON) (at VGS=10V)
9.5. Size:409K aosemi
aot66914l.pdf 
AOT66914L/AOB66914LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)
9.6. Size:374K aosemi
aot66918l.pdf 
AOT66918LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
9.7. Size:766K aosemi
aot66916l.pdf 
AOT66916L/AOB66916LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
Другие MOSFET... FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
