AOT66918L Specs and Replacement

Type Designator: AOT66918L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 3200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220

AOT66918L substitution

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AOT66918L datasheet

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AOT66918L

AOT66918L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

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 aot66919l.pdf pdf_icon

AOT66918L

AOT66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aot66914l aob66914l.pdf pdf_icon

AOT66918L

AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒

 7.3. Size:409K  aosemi
 aot66914l.pdf pdf_icon

AOT66918L

AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOT600A70L, AOT66518L, AOT66613, AOT66616L, AOT66620L, AOT66811L, AOT66914L, AOT66916L, IRF540, AOT66919L, AOT66920L, AOT780A70L, AOTF080A60L, AOTF095A60FDL, AOTF095A60L, AOTF125A60FDL, AOTF125A60L

Keywords - AOT66918L MOSFET specs

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