AOT66920L Datasheet and Replacement
Type Designator: AOT66920L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 485 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
AOT66920L substitution
AOT66920L Datasheet (PDF)
aot66920l.pdf

AOT66920L/AOB66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aot66919l.pdf

AOT66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aot66914l.pdf

AOT66914L/AOB66914LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)
aot66918l.pdf

AOT66918LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
Datasheet: AOT66613 , AOT66616L , AOT66620L , AOT66811L , AOT66914L , AOT66916L , AOT66918L , AOT66919L , IRFP460 , AOT780A70L , AOTF080A60L , AOTF095A60FDL , AOTF095A60L , AOTF125A60FDL , AOTF125A60L , AOTF160A60FDL , AOTF160A60L .
History: 2SK3492 | 2SK3549W | IPA50R299CP | DMN2075U | MSAFX76N07A | APT50M75LFLLG | MSAFA75N10C
Keywords - AOT66920L MOSFET datasheet
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History: 2SK3492 | 2SK3549W | IPA50R299CP | DMN2075U | MSAFX76N07A | APT50M75LFLLG | MSAFA75N10C



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