All MOSFET. AOT66920L Datasheet

 

AOT66920L Datasheet and Replacement


   Type Designator: AOT66920L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 485 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

 AOT66920L substitution

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AOT66920L Datasheet (PDF)

 ..1. Size:840K  aosemi
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AOT66920L

AOT66920L/AOB66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:370K  aosemi
 aot66919l.pdf pdf_icon

AOT66920L

AOT66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:409K  aosemi
 aot66914l.pdf pdf_icon

AOT66920L

AOT66914L/AOB66914LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)

 8.3. Size:374K  aosemi
 aot66918l.pdf pdf_icon

AOT66920L

AOT66918LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)

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Datasheet: AOT66613 , AOT66616L , AOT66620L , AOT66811L , AOT66914L , AOT66916L , AOT66918L , AOT66919L , IRF640 , AOT780A70L , AOTF080A60L , AOTF095A60FDL , AOTF095A60L , AOTF125A60FDL , AOTF125A60L , AOTF160A60FDL , AOTF160A60L .

History: IPL60R210P6 | 2SK3471 | SSM6K204FE | STB18N65M5 | STB16NM50N | VBZE50P06 | IPL60R255P6

Keywords - AOT66920L MOSFET datasheet

 AOT66920L cross reference
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