AOT66920L MOSFET Datasheet: N-Ch, 100V, 80A. Full specification with pinout and replacement list

AOT66920L Specs and Replacement

Type Designator: AOT66920L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 485 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

AOT66920L substitution

- MOSFET ⓘ Cross-Reference Search

AOT66920L datasheet

..1. Size:840K aosemi
aot66920l.pdf pdf_icon

AOT66920L/AOB66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:840K aosemi
aot66920l aob66920l.pdf pdf_icon

8.1. Size:370K aosemi
aot66919l.pdf pdf_icon

AOT66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:409K aosemi
aot66914l aob66914l.pdf pdf_icon

AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒