AOT780A70L Datasheet and Replacement
Type Designator: AOT780A70L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO220
AOT780A70L substitution
AOT780A70L Datasheet (PDF)
aot780a70l.pdf

AOTF780A70L/AOT780A70L/AOB780A70LTM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOT66616L , AOT66620L , AOT66811L , AOT66914L , AOT66916L , AOT66918L , AOT66919L , AOT66920L , IRF640 , AOTF080A60L , AOTF095A60FDL , AOTF095A60L , AOTF125A60FDL , AOTF125A60L , AOTF160A60FDL , AOTF160A60L , AOTF190A60CL .
History: IRF7726 | CS12N80V | AP70T03GS | 2SJ246L | 2SJ389S | IRF7329 | AONS66916T
Keywords - AOT780A70L MOSFET datasheet
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History: IRF7726 | CS12N80V | AP70T03GS | 2SJ246L | 2SJ389S | IRF7329 | AONS66916T



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