AOTF080A60L Specs and Replacement

Type Designator: AOTF080A60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO220F

AOTF080A60L substitution

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AOTF080A60L datasheet

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AOTF080A60L

AOTF080A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.1. Size:454K  aosemi
 aotf095a60fdl.pdf pdf_icon

AOTF080A60L

AOTF095A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.2. Size:499K  aosemi
 aotf095a60l aot095a60l aob095a60l.pdf pdf_icon

AOTF080A60L

AOTF095A60L/AOT095A60L/AOB095A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.3. Size:499K  aosemi
 aotf095a60l.pdf pdf_icon

AOTF080A60L

AOTF095A60L/AOT095A60L/AOB095A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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Detailed specifications: AOT66620L, AOT66811L, AOT66914L, AOT66916L, AOT66918L, AOT66919L, AOT66920L, AOT780A70L, IRF640, AOTF095A60FDL, AOTF095A60L, AOTF125A60FDL, AOTF125A60L, AOTF160A60FDL, AOTF160A60L, AOTF190A60CL, AOTF280A60L

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