All MOSFET. AOTF080A60L Datasheet

 

AOTF080A60L Datasheet and Replacement


   Type Designator: AOTF080A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220F
 

 AOTF080A60L substitution

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AOTF080A60L Datasheet (PDF)

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AOTF080A60L

AOTF080A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:454K  aosemi
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AOTF080A60L

AOTF095A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:499K  aosemi
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AOTF080A60L

AOTF095A60L/AOT095A60L/AOB095A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOT66620L , AOT66811L , AOT66914L , AOT66916L , AOT66918L , AOT66919L , AOT66920L , AOT780A70L , IRFZ44 , AOTF095A60FDL , AOTF095A60L , AOTF125A60FDL , AOTF125A60L , AOTF160A60FDL , AOTF160A60L , AOTF190A60CL , AOTF280A60L .

History: RU3568L | BRD7N60 | FTK3N80F | 2SK3454 | NTMFS5C430NLT1G | STW25N60M2-EP | APT42F50S

Keywords - AOTF080A60L MOSFET datasheet

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