All MOSFET. AOTF080A60L Datasheet

 

AOTF080A60L Datasheet and Replacement


   Type Designator: AOTF080A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 70 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220F
 

 AOTF080A60L substitution

   - MOSFET ⓘ Cross-Reference Search

 

AOTF080A60L Datasheet (PDF)

 ..1. Size:448K  aosemi
aotf080a60l.pdf pdf_icon

AOTF080A60L

AOTF080A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:454K  aosemi
aotf095a60fdl.pdf pdf_icon

AOTF080A60L

AOTF095A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:499K  aosemi
aotf095a60l.pdf pdf_icon

AOTF080A60L

AOTF095A60L/AOT095A60L/AOB095A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDS4070N7

Keywords - AOTF080A60L MOSFET datasheet

 AOTF080A60L cross reference
 AOTF080A60L equivalent finder
 AOTF080A60L lookup
 AOTF080A60L substitution
 AOTF080A60L replacement

 

 
Back to Top

 


 
.