All MOSFET. AOTF095A60FDL Datasheet

 

AOTF095A60FDL Datasheet and Replacement


   Type Designator: AOTF095A60FDL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO220F
 

 AOTF095A60FDL substitution

   - MOSFET ⓘ Cross-Reference Search

 

AOTF095A60FDL Datasheet (PDF)

 ..1. Size:454K  aosemi
 aotf095a60fdl.pdf pdf_icon

AOTF095A60FDL

AOTF095A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 4.1. Size:499K  aosemi
 aotf095a60l.pdf pdf_icon

AOTF095A60FDL

AOTF095A60L/AOT095A60L/AOB095A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:448K  aosemi
 aotf080a60l.pdf pdf_icon

AOTF095A60FDL

AOTF080A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOT66811L , AOT66914L , AOT66916L , AOT66918L , AOT66919L , AOT66920L , AOT780A70L , AOTF080A60L , IRF1404 , AOTF095A60L , AOTF125A60FDL , AOTF125A60L , AOTF160A60FDL , AOTF160A60L , AOTF190A60CL , AOTF280A60L , AOTF360A70L .

History: 2SJ148

Keywords - AOTF095A60FDL MOSFET datasheet

 AOTF095A60FDL cross reference
 AOTF095A60FDL equivalent finder
 AOTF095A60FDL lookup
 AOTF095A60FDL substitution
 AOTF095A60FDL replacement

 

 
Back to Top

 


 
.