AOTF095A60FDL Datasheet and Replacement
Type Designator: AOTF095A60FDL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO220F
AOTF095A60FDL substitution
AOTF095A60FDL Datasheet (PDF)
aotf095a60fdl.pdf

AOTF095A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
aotf095a60l.pdf

AOTF095A60L/AOT095A60L/AOB095A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max
aotf080a60l.pdf

AOTF080A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOT66811L , AOT66914L , AOT66916L , AOT66918L , AOT66919L , AOT66920L , AOT780A70L , AOTF080A60L , IRF1404 , AOTF095A60L , AOTF125A60FDL , AOTF125A60L , AOTF160A60FDL , AOTF160A60L , AOTF190A60CL , AOTF280A60L , AOTF360A70L .
Keywords - AOTF095A60FDL MOSFET datasheet
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