AOTF095A60FDL MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTF095A60FDL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO220F
AOTF095A60FDL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTF095A60FDL Datasheet (PDF)
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
