AOTF66920L Specs and Replacement

Type Designator: AOTF66920L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 485 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: TO220F

AOTF66920L substitution

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AOTF66920L datasheet

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AOTF66920L

AOTF66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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AOTF66920L

AOTF66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:370K  aosemi
 aotf66811l.pdf pdf_icon

AOTF66920L

AOTF66811L TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:376K  aosemi
 aotf66613l.pdf pdf_icon

AOTF66920L

AOTF66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 90A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOTF450A70L, AOTF600A60L, AOTF600A70FL, AOTF600A70L, AOTF66613L, AOTF66616L, AOTF66811L, AOTF66919L, 2SK3878, AOTF780A70L, AOK031A60FD, AOK040A60, AOK042A60FD, AOK065A60, AOK065A60FD, AOK095A60, AOK095A60FD

Keywords - AOTF66920L MOSFET specs

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