AOK125A60FDL MOSFET. Datasheet pdf. Equivalent
Type Designator: AOK125A60FDL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 173 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO247
AOK125A60FDL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOK125A60FDL Datasheet (PDF)
aok125a60fdl.pdf
AOK125A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 88A Optimized switching parameters for better EMI RDS(ON),max
aok125a60.pdf
AOK125A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: SWMI4N65D
History: SWMI4N65D
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