AOK125A60FDL Datasheet and Replacement
Type Designator: AOK125A60FDL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 173 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO247
AOK125A60FDL substitution
AOK125A60FDL Datasheet (PDF)
aok125a60fdl.pdf

AOK125A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 88A Optimized switching parameters for better EMI RDS(ON),max
aok125a60.pdf

AOK125A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOK040A60 , AOK042A60FD , AOK065A60 , AOK065A60FD , AOK095A60 , AOK095A60FD , AOK095A60FDL , AOK125A60 , IRF9540N , AOK160A60 , AOK160A60FDL , AOK2500L , AOK66518 , AOK66613 , AOK66914 , AOI1R4A70 , AOI21357 .
History: LSGE15R085W3
Keywords - AOK125A60FDL MOSFET datasheet
AOK125A60FDL cross reference
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History: LSGE15R085W3



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