All MOSFET. AOK160A60FDL Datasheet

 

AOK160A60FDL MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOK160A60FDL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 173 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO247

 AOK160A60FDL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOK160A60FDL Datasheet (PDF)

 ..1. Size:448K  aosemi
 aok160a60fdl.pdf

AOK160A60FDL AOK160A60FDL

AOK160A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 5.1. Size:461K  aosemi
 aok160a60.pdf

AOK160A60FDL AOK160A60FDL

AOK160A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

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