AOK66518 Specs and Replacement
Type Designator: AOK66518
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 820 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO247
AOK66518 substitution
- MOSFET ⓘ Cross-Reference Search
AOK66518 datasheet
aok66518.pdf
AOK66518 TM 150V N-Channel AlphaSGT General Description Product Summary VDS 150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒
aok66914.pdf
AOK66914 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒
aok66613.pdf
AOK66613 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOK095A60, AOK095A60FD, AOK095A60FDL, AOK125A60, AOK125A60FDL, AOK160A60, AOK160A60FDL, AOK2500L, 12N60, AOK66613, AOK66914, AOI1R4A70, AOI21357, AOI360A70, AOI380A60C, AOI450A70, AOI600A60
Keywords - AOK66518 MOSFET specs
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