All MOSFET. AOI1R4A70 Datasheet

 

AOI1R4A70 Datasheet and Replacement


   Type Designator: AOI1R4A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO251A
 

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AOI1R4A70 Datasheet (PDF)

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AOI1R4A70

AOD1R4A70/AOI1R4A70TM700V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOK125A60 , AOK125A60FDL , AOK160A60 , AOK160A60FDL , AOK2500L , AOK66518 , AOK66613 , AOK66914 , AON7506 , AOI21357 , AOI360A70 , AOI380A60C , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 .

History: NVMTS0D6N04C

Keywords - AOI1R4A70 MOSFET datasheet

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