AOI1R4A70 Specs and Replacement
Type Designator: AOI1R4A70
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 12 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251A
AOI1R4A70 substitution
- MOSFET ⓘ Cross-Reference Search
AOI1R4A70 datasheet
aod1r4a70 aoi1r4a70.pdf
AOD1R4A70/AOI1R4A70 TM 700V, a MOS N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aoi1r4a70.pdf
AOD1R4A70/AOI1R4A70 TM 700V, a MOS N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOK125A60, AOK125A60FDL, AOK160A60, AOK160A60FDL, AOK2500L, AOK66518, AOK66613, AOK66914, IRFB3607, AOI21357, AOI360A70, AOI380A60C, AOI450A70, AOI600A60, AOI600A70, AOI600A70R, AOI950A70
Keywords - AOI1R4A70 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
