AOI380A60C Datasheet and Replacement
Type Designator: AOI380A60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO251A
AOI380A60C substitution
AOI380A60C Datasheet (PDF)
aoi380a60c.pdf

AOD380A60C/AOI380A60CTM 600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOK160A60FDL , AOK2500L , AOK66518 , AOK66613 , AOK66914 , AOI1R4A70 , AOI21357 , AOI360A70 , IRLB4132 , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 .
History: DI9430T | BSB014N04LX3G | 6N60KG-TF1-T | CTD03N10P5 | YTF251 | AOSS21115C | SSM3K7002BFU
Keywords - AOI380A60C MOSFET datasheet
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History: DI9430T | BSB014N04LX3G | 6N60KG-TF1-T | CTD03N10P5 | YTF251 | AOSS21115C | SSM3K7002BFU



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