All MOSFET. AOI380A60C Datasheet

 

AOI380A60C Datasheet and Replacement


   Type Designator: AOI380A60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO251A
 

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AOI380A60C Datasheet (PDF)

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AOI380A60C

AOD380A60C/AOI380A60CTM 600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOK160A60FDL , AOK2500L , AOK66518 , AOK66613 , AOK66914 , AOI1R4A70 , AOI21357 , AOI360A70 , CS150N03A8 , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 .

History: IPB60R099P7

Keywords - AOI380A60C MOSFET datasheet

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