All MOSFET. AOI600A60 Datasheet

 

AOI600A60 Datasheet and Replacement


   Type Designator: AOI600A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251A
 

 AOI600A60 substitution

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AOI600A60 Datasheet (PDF)

 ..1. Size:486K  aosemi
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AOI600A60

AOD600A60/AOI600A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

 7.1. Size:528K  aosemi
 aoi600a70r.pdf pdf_icon

AOI600A60

AOD600A70R/AOI600A70RTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 7.2. Size:660K  aosemi
 aoi600a70.pdf pdf_icon

AOI600A60

AOD600A70/AOI600A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOK66518 , AOK66613 , AOK66914 , AOI1R4A70 , AOI21357 , AOI360A70 , AOI380A60C , AOI450A70 , IRFP250 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 , AOY66923 , AOD1R4A70 .

History: VBC6P3033 | HY1908U | HGN035N10AL | LSC65R380GF | LSB60R030HT | LSDN60R950HT | 1N60L-TF2-T

Keywords - AOI600A60 MOSFET datasheet

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