AOI600A60 Specs and Replacement

Type Designator: AOI600A60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251A

AOI600A60 substitution

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AOI600A60 datasheet

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 aod600a60 aoi600a60.pdf pdf_icon

AOI600A60

AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 ..2. Size:486K  aosemi
 aoi600a60.pdf pdf_icon

AOI600A60

AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 7.1. Size:660K  aosemi
 aod600a70 aoi600a70.pdf pdf_icon

AOI600A60

AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 7.2. Size:528K  aosemi
 aoi600a70r.pdf pdf_icon

AOI600A60

AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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Detailed specifications: AOK66518, AOK66613, AOK66914, AOI1R4A70, AOI21357, AOI360A70, AOI380A60C, AOI450A70, AON7506, AOI600A70, AOI600A70R, AOI950A70, AOY66620, AOY66919, AOY66920, AOY66923, AOD1R4A70

Keywords - AOI600A60 MOSFET specs

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