All MOSFET. AOI950A70 Datasheet

 

AOI950A70 Datasheet and Replacement


   Type Designator: AOI950A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO251A
 

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AOI950A70 Datasheet (PDF)

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AOI950A70

AOD950A70/AOI950A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOI1R4A70 , AOI21357 , AOI360A70 , AOI380A60C , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , IRFZ24N , AOY66620 , AOY66919 , AOY66920 , AOY66923 , AOD1R4A70 , AOD210V60E , AOD21357 , AOD280A60 .

History: DH045N04E | AUIRFP4227 | SSM3K56CT | IXTJ3N150 | VBZE04N03 | AM90N06-04M2B | 2SK1928

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