All MOSFET. AOY66919 Datasheet

 

AOY66919 Datasheet and Replacement


   Type Designator: AOY66919
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO251B
 

 AOY66919 substitution

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AOY66919 Datasheet (PDF)

 ..1. Size:353K  aosemi
 aoy66919.pdf pdf_icon

AOY66919

AOY66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:569K  aosemi
 aoy66920.pdf pdf_icon

AOY66919

AOY66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.2. Size:593K  aosemi
 aoy66923.pdf pdf_icon

AOY66919

AOY66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) RDS(ON) (at VGS=10V)

 9.1. Size:349K  aosemi
 aoy66620.pdf pdf_icon

AOY66919

AOY66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 58A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

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Datasheet: AOI360A70 , AOI380A60C , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , BS170 , AOY66920 , AOY66923 , AOD1R4A70 , AOD210V60E , AOD21357 , AOD280A60 , AOD32324 , AOD32326 .

History: MTP2010J3 | AOY66920 | AOI600A70 | AOY66923 | UTT150N06 | IXTP90N055T | CS8N65D

Keywords - AOY66919 MOSFET datasheet

 AOY66919 cross reference
 AOY66919 equivalent finder
 AOY66919 lookup
 AOY66919 substitution
 AOY66919 replacement

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