AOY66919 Datasheet and Replacement
Type Designator: AOY66919
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO251B
AOY66919 substitution
AOY66919 Datasheet (PDF)
aoy66919.pdf

AOY66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aoy66920.pdf

AOY66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) RDS(ON) (at VGS=10V)
aoy66923.pdf

AOY66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) RDS(ON) (at VGS=10V)
aoy66620.pdf

AOY66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 58A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
Datasheet: AOI360A70 , AOI380A60C , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , 18N50 , AOY66920 , AOY66923 , AOD1R4A70 , AOD210V60E , AOD21357 , AOD280A60 , AOD32324 , AOD32326 .
History: HMS4294 | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | SM4311PSKP | AP60SL650AFI
Keywords - AOY66919 MOSFET datasheet
AOY66919 cross reference
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History: HMS4294 | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | SM4311PSKP | AP60SL650AFI



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