AOD32326 Datasheet and Replacement
Type Designator: AOD32326
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO252
AOD32326 Datasheet (PDF)
aod32326.pdf

AOD3232630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
aod32324.pdf

AOD3232430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
aod32334c.pdf

AOD32334C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOY66919 , AOY66920 , AOY66923 , AOD1R4A70 , AOD210V60E , AOD21357 , AOD280A60 , AOD32324 , IRFZ46N , AOD32334C , AOD360A70 , AOD380A60 , AOD380A60C , AOD450A70 , AOD600A60 , AOD600A70 , AOD600A70R .
History: SI5443DC
Keywords - AOD32326 MOSFET datasheet
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History: SI5443DC



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