All MOSFET. AOD380A60 Datasheet

 

AOD380A60 Datasheet and Replacement


   Type Designator: AOD380A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252
 

 AOD380A60 substitution

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AOD380A60 Datasheet (PDF)

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AOD380A60

AOD380A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 0.1. Size:467K  aosemi
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AOD380A60

AOD380A60C/AOI380A60CTM 600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOD1R4A70 , AOD210V60E , AOD21357 , AOD280A60 , AOD32324 , AOD32326 , AOD32334C , AOD360A70 , 2N60 , AOD380A60C , AOD450A70 , AOD600A60 , AOD600A70 , AOD600A70R , AOD66616 , AOD66620 , AOD66643 .

History: AM7430N | UTC654 | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B

Keywords - AOD380A60 MOSFET datasheet

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