All MOSFET. AOD66919 Datasheet

 

AOD66919 Datasheet and Replacement


   Type Designator: AOD66919
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252
 

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AOD66919 Datasheet (PDF)

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 aod66919.pdf pdf_icon

AOD66919

AOD66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:771K  aosemi
 aod66920.pdf pdf_icon

AOD66919

AOD66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.2. Size:726K  aosemi
 aod66923.pdf pdf_icon

AOD66919

AOD66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.1. Size:555K  aosemi
 aod661.pdf pdf_icon

AOD66919

AOD66130V Dual Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A -12A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOD380A60C , AOD450A70 , AOD600A60 , AOD600A70 , AOD600A70R , AOD66616 , AOD66620 , AOD66643 , P60NF06 , AOD66920 , AOD66923 , AOD780A70 , AOD950A70 , AOD609G , AOW125A60 , AOW190A60C , AOW360A70 .

History: SIF5N40D | MS10N80

Keywords - AOD66919 MOSFET datasheet

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