AOD66919 Specs and Replacement
Type Designator: AOD66919
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
Qg ⓘ - Total Gate Charge: 47 nC
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
AOD66919 substitution
- MOSFET ⓘ Cross-Reference Search
AOD66919 datasheet
aod66919.pdf
AOD66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aod66920.pdf
AOD66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aod66923.pdf
AOD66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aod661.pdf
AOD661 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A -12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOD380A60C, AOD450A70, AOD600A60, AOD600A70, AOD600A70R, AOD66616, AOD66620, AOD66643, AO3400A, AOD66920, AOD66923, AOD780A70, AOD950A70, AOD609G, AOW125A60, AOW190A60C, AOW360A70
Keywords - AOD66919 MOSFET specs
AOD66919 cross reference
AOD66919 equivalent finder
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AOD66919 substitution
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