AOD66923 Datasheet and Replacement
Type Designator: AOD66923
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
AOD66923 substitution
AOD66923 Datasheet (PDF)
aod66923.pdf

AOD66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aod66920.pdf

AOD66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aod66919.pdf

AOD66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aod661.pdf

AOD66130V Dual Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A -12A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOD600A60 , AOD600A70 , AOD600A70R , AOD66616 , AOD66620 , AOD66643 , AOD66919 , AOD66920 , IRFZ48N , AOD780A70 , AOD950A70 , AOD609G , AOW125A60 , AOW190A60C , AOW360A70 , AOW66613 , AOW66616 .
Keywords - AOD66923 MOSFET datasheet
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