AOD66923 Specs and Replacement

Type Designator: AOD66923

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V

Qg ⓘ - Total Gate Charge: 25 nC

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO252

AOD66923 substitution

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AOD66923 datasheet

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AOD66923

AOD66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 58A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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aod66920.pdf pdf_icon

AOD66923

AOD66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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aod66919.pdf pdf_icon

AOD66923

AOD66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:555K  aosemi
aod661.pdf pdf_icon

AOD66923

AOD661 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A -12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOD600A60, AOD600A70, AOD600A70R, AOD66616, AOD66620, AOD66643, AOD66919, AOD66920, STP65NF06, AOD780A70, AOD950A70, AOD609G, AOW125A60, AOW190A60C, AOW360A70, AOW66613, AOW66616

Keywords - AOD66923 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.