AOD950A70 Specs and Replacement

Type Designator: AOD950A70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO252

AOD950A70 substitution

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AOD950A70 datasheet

 ..1. Size:786K  aosemi
 aod950a70 aoi950a70.pdf pdf_icon

AOD950A70

AOD950A70/AOI950A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 ..2. Size:877K  aosemi
 aod950a70.pdf pdf_icon

AOD950A70

AOD950A70/AOI950A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOD600A70R, AOD66616, AOD66620, AOD66643, AOD66919, AOD66920, AOD66923, AOD780A70, 7N60, AOD609G, AOW125A60, AOW190A60C, AOW360A70, AOW66613, AOW66616, AOWF095A60, AOWF125A60

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