All MOSFET. AOD950A70 Datasheet

 

AOD950A70 Datasheet and Replacement


   Type Designator: AOD950A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252
 

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AOD950A70 Datasheet (PDF)

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AOD950A70

AOD950A70/AOI950A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOD600A70R , AOD66616 , AOD66620 , AOD66643 , AOD66919 , AOD66920 , AOD66923 , AOD780A70 , IRF830 , AOD609G , AOW125A60 , AOW190A60C , AOW360A70 , AOW66613 , AOW66616 , AOWF095A60 , AOWF125A60 .

History: 7N80G-TQ2-R

Keywords - AOD950A70 MOSFET datasheet

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