AOW360A70 Specs and Replacement

Type Designator: AOW360A70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO262

AOW360A70 substitution

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AOW360A70 datasheet

 ..1. Size:653K  aosemi
 aow360a70 aowf360a70.pdf pdf_icon

AOW360A70

AOW360A70/AOWF360A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 ..2. Size:653K  aosemi
 aow360a70.pdf pdf_icon

AOW360A70

AOW360A70/AOWF360A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOD66919, AOD66920, AOD66923, AOD780A70, AOD950A70, AOD609G, AOW125A60, AOW190A60C, IRLB3034, AOW66613, AOW66616, AOWF095A60, AOWF125A60, AOWF160A60, AOWF190A60C, AOWF360A70, AOWF380A60C

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