AOW360A70 Datasheet and Replacement
Type Designator: AOW360A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 34 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO262
AOW360A70 substitution
AOW360A70 Datasheet (PDF)
aow360a70.pdf
AOW360A70/AOWF360A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOD66919 , AOD66920 , AOD66923 , AOD780A70 , AOD950A70 , AOD609G , AOW125A60 , AOW190A60C , IRLB3034 , AOW66613 , AOW66616 , AOWF095A60 , AOWF125A60 , AOWF160A60 , AOWF190A60C , AOWF360A70 , AOWF380A60C .
History: STU80N4F6 | IXTP55N075T
Keywords - AOW360A70 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STU80N4F6 | IXTP55N075T
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