AOW66616 Specs and Replacement

Type Designator: AOW66616

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.5 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO262

AOW66616 substitution

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AOW66616 datasheet

 ..1. Size:709K  aosemi
 aow66616.pdf pdf_icon

AOW66616

AOW66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:355K  aosemi
 aow66613.pdf pdf_icon

AOW66616

AOW66613 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:313K  1
 aow66412.pdf pdf_icon

AOW66616

AOW66412 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:717K  aosemi
 aow66412.pdf pdf_icon

AOW66616

AOW66412 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOD66923, AOD780A70, AOD950A70, AOD609G, AOW125A60, AOW190A60C, AOW360A70, AOW66613, IRFB7545, AOWF095A60, AOWF125A60, AOWF160A60, AOWF190A60C, AOWF360A70, AOWF380A60C, AOWF450A70, AOWF600A60

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.