AOW66616 Datasheet and Replacement
Type Designator: AOW66616
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15.5 nS
Cossⓘ - Output Capacitance: 940 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO262
AOW66616 substitution
AOW66616 Datasheet (PDF)
aow66616.pdf
AOW66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aow66613.pdf
AOW66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aow66412.pdf
AOW66412TM 40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aow66412.pdf
AOW66412TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOD66923 , AOD780A70 , AOD950A70 , AOD609G , AOW125A60 , AOW190A60C , AOW360A70 , AOW66613 , IRFB7545 , AOWF095A60 , AOWF125A60 , AOWF160A60 , AOWF190A60C , AOWF360A70 , AOWF380A60C , AOWF450A70 , AOWF600A60 .
History: D18N20 | IPD035N06L3G
Keywords - AOW66616 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: D18N20 | IPD035N06L3G
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