All MOSFET. AOWF600A60 Datasheet

 

AOWF600A60 Datasheet and Replacement


   Type Designator: AOWF600A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO262F
 

 AOWF600A60 substitution

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AOWF600A60 Datasheet (PDF)

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AOWF600A60

AOWF600A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

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AOWF600A60

AOWF600A70FTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 6.2. Size:708K  aosemi
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AOWF600A60

AOWF600A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOW66616 , AOWF095A60 , AOWF125A60 , AOWF160A60 , AOWF190A60C , AOWF360A70 , AOWF380A60C , AOWF450A70 , IRFB7545 , AOWF600A70 , AOWF600A70F , AOWF780A70 , AOB095A60L , AOB125A60L , AOB160A60L , AOB190A60CL , AOB190A60L .

History: JMSH1003NE | 2SJ274 | 2SK3457 | NVTFS4C10N | CS3N80BK | AP6N100H | DH081N03E

Keywords - AOWF600A60 MOSFET datasheet

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