All MOSFET. AOWF600A70F Datasheet

 

AOWF600A70F MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOWF600A70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO262F

 AOWF600A70F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOWF600A70F Datasheet (PDF)

 ..1. Size:463K  aosemi
 aowf600a70f.pdf

AOWF600A70F AOWF600A70F

AOWF600A70FTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 4.1. Size:708K  aosemi
 aowf600a70.pdf

AOWF600A70F AOWF600A70F

AOWF600A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 6.1. Size:436K  aosemi
 aowf600a60.pdf

AOWF600A70F AOWF600A70F

AOWF600A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTH27N40MA | NTZD3152P

 

 
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