AOWF780A70 Datasheet and Replacement
Type Designator: AOWF780A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO262F
AOWF780A70 substitution
AOWF780A70 Datasheet (PDF)
aowf780a70.pdf

AOWF780A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max
aowf7s65.pdf

AOW7S65/AOWF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW7S65 & AOWF7S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 30Adesigned to deliver high levels of performance and RDS(ON),max 0.65robustness in switching applications. Qg,typ 9.2nCBy providing low RDS(on), Qg and EO
aowf7s60.pdf

AOW7S60/AOWF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW7S60 & AOWF7S60 have been fabricated usingthe advanced MOSTM high voltage process that is IDM 33Adesigned to deliver high levels of performance and RDS(ON),max 0.6robustness in switching applications. Qg,typ 8.2nCBy providing low RDS(on), Qg and EOS
Datasheet: AOWF160A60 , AOWF190A60C , AOWF360A70 , AOWF380A60C , AOWF450A70 , AOWF600A60 , AOWF600A70 , AOWF600A70F , BS170 , AOB095A60L , AOB125A60L , AOB160A60L , AOB190A60CL , AOB190A60L , AOB280A60L , AOB360A70L , AOB380A60CL .
History: APT3580BN | RSR030N06
Keywords - AOWF780A70 MOSFET datasheet
AOWF780A70 cross reference
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History: APT3580BN | RSR030N06



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