AOWF780A70 Specs and Replacement

Type Designator: AOWF780A70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: TO262F

AOWF780A70 substitution

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AOWF780A70 datasheet

 ..1. Size:448K  aosemi
 aowf780a70.pdf pdf_icon

AOWF780A70

AOWF780A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.1. Size:261K  aosemi
 aowf7s65.pdf pdf_icon

AOWF780A70

AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO... See More ⇒

 9.2. Size:261K  aosemi
 aow7s65 aowf7s65.pdf pdf_icon

AOWF780A70

AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO... See More ⇒

 9.3. Size:271K  aosemi
 aowf7s60.pdf pdf_icon

AOWF780A70

AOW7S60/AOWF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW7S60 & AOWF7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOS... See More ⇒

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Detailed specifications: AOWF160A60, AOWF190A60C, AOWF360A70, AOWF380A60C, AOWF450A70, AOWF600A60, AOWF600A70, AOWF600A70F, IRF730, AOB095A60L, AOB125A60L, AOB160A60L, AOB190A60CL, AOB190A60L, AOB280A60L, AOB360A70L, AOB380A60CL

Keywords - AOWF780A70 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.