AOWF780A70. Аналоги и основные параметры

Наименование производителя: AOWF780A70

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 23 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 18 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.78 Ohm

Тип корпуса: TO262F

Аналог (замена) для AOWF780A70

- подборⓘ MOSFET транзистора по параметрам

 

AOWF780A70 даташит

 ..1. Size:448K  aosemi
 aowf780a70.pdf pdf_icon

AOWF780A70

AOWF780A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:261K  aosemi
 aowf7s65.pdf pdf_icon

AOWF780A70

AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO

 9.2. Size:261K  aosemi
 aow7s65 aowf7s65.pdf pdf_icon

AOWF780A70

AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO

 9.3. Size:271K  aosemi
 aowf7s60.pdf pdf_icon

AOWF780A70

AOW7S60/AOWF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW7S60 & AOWF7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOS

ПОКАЗАТЬ ЕЩЁ

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