AOB600A60L Specs and Replacement
Type Designator: AOB600A60L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO263
AOB600A60L substitution
- MOSFET ⓘ Cross-Reference Search
AOB600A60L datasheet
aotf600a60l aot600a60l aob600a60l.pdf
AOTF600A60L/AOT600A60L/AOB600A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aob600a60l.pdf
AOTF600A60L/AOT600A60L/AOB600A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aob600a70fl.pdf
AOB600A70FL TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aob600a70l.pdf
AOTF600A70L/AOT600A70L/AOB600A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOB125A60L, AOB160A60L, AOB190A60CL, AOB190A60L, AOB280A60L, AOB360A70L, AOB380A60CL, AOB450A70L, IRFZ44, AOB600A70FL, AOB600A70L, AOB66216L, AOB66518L, AOB66613L, AOB66616L, AOB66620L, AOB66811L
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