AOB600A70L Datasheet and Replacement
Type Designator: AOB600A70L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO263
AOB600A70L substitution
AOB600A70L Datasheet (PDF)
aob600a70l.pdf

AOTF600A70L/AOT600A70L/AOB600A70LTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
aob600a70fl.pdf

AOB600A70FLTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
aob600a60l.pdf

AOTF600A60L/AOT600A60L/AOB600A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOB190A60CL , AOB190A60L , AOB280A60L , AOB360A70L , AOB380A60CL , AOB450A70L , AOB600A60L , AOB600A70FL , IRF1404 , AOB66216L , AOB66518L , AOB66613L , AOB66616L , AOB66620L , AOB66811L , AOB66916L , AOB66919L .
History: CHM5506JGP | SI2318A | HGB390N25S | HUFA76413P3 | BLP03N10-F | PMCXB900UE | IPD053N06N
Keywords - AOB600A70L MOSFET datasheet
AOB600A70L cross reference
AOB600A70L equivalent finder
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History: CHM5506JGP | SI2318A | HGB390N25S | HUFA76413P3 | BLP03N10-F | PMCXB900UE | IPD053N06N



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