AOB66216L Specs and Replacement
Type Designator: AOB66216L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ -
Output Capacitance: 720 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: TO263
- MOSFET ⓘ Cross-Reference Search
AOB66216L datasheet
..1. Size:374K aosemi
aob66216l.pdf 
AOB66216L TM 120V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 120V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 120A Area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
9.1. Size:380K aosemi
aob66518l.pdf
AOB66518L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 120A (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:769K aosemi
aob66916l.pdf
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V) ... See More ⇒
9.3. Size:369K aosemi
aob66811l.pdf
AOB66811L TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 140A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:842K aosemi
aob66920l.pdf
AOT66920L/AOB66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
9.5. Size:409K aosemi
aot66914l aob66914l.pdf
AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:383K aosemi
aob66935l.pdf
AOB66935L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 180A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:379K aosemi
aob66918l.pdf
AOB66918L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:840K aosemi
aot66920l aob66920l.pdf
AOT66920L/AOB66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:1258K aosemi
aot66616l aob66616l.pdf
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
9.10. Size:395K aosemi
aob66613l.pdf
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
9.11. Size:769K aosemi
aot66916l aob66916l.pdf
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V) ... See More ⇒
9.12. Size:390K aosemi
aob66620l.pdf
AOT66620L/AOB66620L TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒
9.13. Size:390K aosemi
aot66620l aob66620l.pdf
AOT66620L/AOB66620L TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒
9.14. Size:395K aosemi
aot66613l aob66613l.pdf
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
9.15. Size:367K aosemi
aob66919l.pdf
AOB66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.16. Size:788K aosemi
aob66616l.pdf
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOB190A60L, AOB280A60L, AOB360A70L, AOB380A60CL, AOB450A70L, AOB600A60L, AOB600A70FL, AOB600A70L, IRLZ44N, AOB66518L, AOB66613L, AOB66616L, AOB66620L, AOB66811L, AOB66916L, AOB66919L, AOB66920L
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
