AOB66216L. Аналоги и основные параметры
Наименование производителя: AOB66216L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 375 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 720 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
Тип корпуса: TO263
Аналог (замена) для AOB66216L
- подборⓘ MOSFET транзистора по параметрам
AOB66216L даташит
..1. Size:374K aosemi
aob66216l.pdf 
AOB66216L TM 120V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 120V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 120A Area (SOA) RDS(ON) (at VGS=10V)
9.1. Size:380K aosemi
aob66518l.pdf 
AOB66518L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 120A (SOA) RDS(ON) (at VGS=10V)
9.2. Size:769K aosemi
aob66916l.pdf 
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
9.3. Size:369K aosemi
aob66811l.pdf 
AOB66811L TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 140A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)
9.4. Size:842K aosemi
aob66920l.pdf 
AOT66920L/AOB66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.5. Size:409K aosemi
aot66914l aob66914l.pdf 
AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)
9.6. Size:383K aosemi
aob66935l.pdf 
AOB66935L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 180A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
9.7. Size:379K aosemi
aob66918l.pdf 
AOB66918L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
9.8. Size:840K aosemi
aot66920l aob66920l.pdf 
AOT66920L/AOB66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.9. Size:1258K aosemi
aot66616l aob66616l.pdf 
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
9.10. Size:395K aosemi
aob66613l.pdf 
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
9.11. Size:769K aosemi
aot66916l aob66916l.pdf 
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
9.12. Size:390K aosemi
aob66620l.pdf 
AOT66620L/AOB66620L TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
9.13. Size:390K aosemi
aot66620l aob66620l.pdf 
AOT66620L/AOB66620L TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
9.14. Size:395K aosemi
aot66613l aob66613l.pdf 
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
9.15. Size:367K aosemi
aob66919l.pdf 
AOB66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.16. Size:788K aosemi
aob66616l.pdf 
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
Другие MOSFET... AOB190A60L
, AOB280A60L
, AOB360A70L
, AOB380A60CL
, AOB450A70L
, AOB600A60L
, AOB600A70FL
, AOB600A70L
, IRLZ44N
, AOB66518L
, AOB66613L
, AOB66616L
, AOB66620L
, AOB66811L
, AOB66916L
, AOB66919L
, AOB66920L
.
History: 3SK115
| WMK12N105C2
| AOB600A70FL
| 3N80L-TA3-T
| WMK10N80M3
| VS3622DP
