AOB66620L Datasheet and Replacement
Type Designator: AOB66620L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263
AOB66620L substitution
AOB66620L Datasheet (PDF)
aob66620l.pdf

AOT66620L/AOB66620LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aob66613l.pdf

AOT66613L/AOB66613LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aob66616l.pdf

AOT66616L/AOB66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aob66518l.pdf

AOB66518L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 120A (SOA) RDS(ON) (at VGS=10V)
Datasheet: AOB450A70L , AOB600A60L , AOB600A70FL , AOB600A70L , AOB66216L , AOB66518L , AOB66613L , AOB66616L , IRFB4227 , AOB66811L , AOB66916L , AOB66919L , AOB66920L , AOB66935L , AOB780A70L , AOTL095A60 , AOTL125A60 .
History: AOB66916L | SVF2N60M | HY1607P | MPT035N08S | AON6435 | STT3962NE | OSG60R2K2AF
Keywords - AOB66620L MOSFET datasheet
AOB66620L cross reference
AOB66620L equivalent finder
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History: AOB66916L | SVF2N60M | HY1607P | MPT035N08S | AON6435 | STT3962NE | OSG60R2K2AF



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