AOB66919L Specs and Replacement
Type Designator: AOB66919L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 187 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO263
AOB66919L substitution
- MOSFET ⓘ Cross-Reference Search
AOB66919L datasheet
aob66919l.pdf
AOB66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aob66916l.pdf
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V) ... See More ⇒
aot66914l aob66914l.pdf
AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V) ... See More ⇒
aob66918l.pdf
AOB66918L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOB600A70L, AOB66216L, AOB66518L, AOB66613L, AOB66616L, AOB66620L, AOB66811L, AOB66916L, 10N60, AOB66920L, AOB66935L, AOB780A70L, AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60, AOTL190A60
Keywords - AOB66919L MOSFET specs
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AOB66919L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
