AOB66920L Datasheet and Replacement
Type Designator: AOB66920L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 485 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
AOB66920L substitution
AOB66920L Datasheet (PDF)
aob66920l.pdf

AOT66920L/AOB66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aob66916l.pdf

AOT66916L/AOB66916LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
aob66935l.pdf

AOB66935LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 180A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
aob66919l.pdf

AOB66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOB66216L , AOB66518L , AOB66613L , AOB66616L , AOB66620L , AOB66811L , AOB66916L , AOB66919L , IRFB4110 , AOB66935L , AOB780A70L , AOTL095A60 , AOTL125A60 , AOTL130A60FD , AOTL160A60 , AOTL190A60 , AOTL42A60E .
Keywords - AOB66920L MOSFET datasheet
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