AOB780A70L Specs and Replacement
Type Designator: AOB780A70L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO263
AOB780A70L substitution
- MOSFET ⓘ Cross-Reference Search
AOB780A70L datasheet
aotf780a70l aot780a70l aob780a70l.pdf
AOTF780A70L/AOT780A70L/AOB780A70L TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aob780a70l.pdf
AOTF780A70L/AOT780A70L/AOB780A70L TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOB66613L, AOB66616L, AOB66620L, AOB66811L, AOB66916L, AOB66919L, AOB66920L, AOB66935L, 2N7000, AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60, AOTL190A60, AOTL42A60E, AOTL66215, AOTL66401
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