AOTL130A60FD
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTL130A60FD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 277
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
TOLL
AOTL130A60FD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTL130A60FD
Datasheet (PDF)
..1. Size:450K aosemi
aotl130a60fd.pdf
AOTL130A60FDTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 112A Optimized switching parameters for better EMI RDS(ON),max
9.1. Size:551K aosemi
aotl160a60.pdf
AOTL160A60600V, aMOS TM N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
9.2. Size:456K aosemi
aotl190a60.pdf
AOTL190A60TM600V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
9.3. Size:442K aosemi
aotl125a60.pdf
AOTL125A60TM600V, a MOS5 TOLLfor high density, high reliability SMPSGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
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