All MOSFET. AOTL130A60FD Datasheet

 

AOTL130A60FD Datasheet and Replacement


   Type Designator: AOTL130A60FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 277 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TOLL
 

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AOTL130A60FD Datasheet (PDF)

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AOTL130A60FD

AOTL130A60FDTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 112A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:551K  aosemi
 aotl160a60.pdf pdf_icon

AOTL130A60FD

AOTL160A60600V, aMOS TM N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:456K  aosemi
 aotl190a60.pdf pdf_icon

AOTL130A60FD

AOTL190A60TM600V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.3. Size:442K  aosemi
 aotl125a60.pdf pdf_icon

AOTL130A60FD

AOTL125A60TM600V, a MOS5 TOLLfor high density, high reliability SMPSGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

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Datasheet: AOB66811L , AOB66916L , AOB66919L , AOB66920L , AOB66935L , AOB780A70L , AOTL095A60 , AOTL125A60 , STP75NF75 , AOTL160A60 , AOTL190A60 , AOTL42A60E , AOTL66215 , AOTL66401 , AOTL66515 , AOTL66518 , AOTL66608 .

History: RUE003N02TL | 8N60L-TF2-T | 2SK1808 | AP04N60S-H-HF | APM4015PU | KI1563DH | 2SK3604-01L

Keywords - AOTL130A60FD MOSFET datasheet

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