AOTL160A60 Datasheet and Replacement
Type Designator: AOTL160A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 62 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TOLL
AOTL160A60 substitution
AOTL160A60 Datasheet (PDF)
aotl160a60.pdf

AOTL160A60600V, aMOS TM N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
aotl130a60fd.pdf

AOTL130A60FDTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 112A Optimized switching parameters for better EMI RDS(ON),max
aotl190a60.pdf

AOTL190A60TM600V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
aotl125a60.pdf

AOTL125A60TM600V, a MOS5 TOLLfor high density, high reliability SMPSGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOB66916L , AOB66919L , AOB66920L , AOB66935L , AOB780A70L , AOTL095A60 , AOTL125A60 , AOTL130A60FD , AON7408 , AOTL190A60 , AOTL42A60E , AOTL66215 , AOTL66401 , AOTL66515 , AOTL66518 , AOTL66608 , AOTL66610 .
History: PE532DY | OSG60R1K8PF
Keywords - AOTL160A60 MOSFET datasheet
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History: PE532DY | OSG60R1K8PF



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