AOTL190A60 Specs and Replacement
Type Designator: AOTL190A60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 201 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TOLL
AOTL190A60 substitution
- MOSFET ⓘ Cross-Reference Search
AOTL190A60 datasheet
aotl190a60.pdf
AOTL190A60 TM 600V, a MOS N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotl160a60.pdf
AOTL160A60 600V, aMOS TM N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotl130a60fd.pdf
AOTL130A60FD TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 112A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotl125a60.pdf
AOTL125A60 TM 600V, a MOS5 TOLL for high density, high reliability SMPS General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOB66919L, AOB66920L, AOB66935L, AOB780A70L, AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60, IRF630, AOTL42A60E, AOTL66215, AOTL66401, AOTL66515, AOTL66518, AOTL66608, AOTL66610, AOTL66810
Keywords - AOTL190A60 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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