All MOSFET. AOTL190A60 Datasheet

 

AOTL190A60 Datasheet and Replacement


   Type Designator: AOTL190A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 201 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TOLL
 

 AOTL190A60 substitution

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AOTL190A60 Datasheet (PDF)

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AOTL190A60

AOTL190A60TM600V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:551K  aosemi
 aotl160a60.pdf pdf_icon

AOTL190A60

AOTL160A60600V, aMOS TM N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:450K  aosemi
 aotl130a60fd.pdf pdf_icon

AOTL190A60

AOTL130A60FDTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 112A Optimized switching parameters for better EMI RDS(ON),max

 9.3. Size:442K  aosemi
 aotl125a60.pdf pdf_icon

AOTL190A60

AOTL125A60TM600V, a MOS5 TOLLfor high density, high reliability SMPSGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

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Datasheet: AOB66919L , AOB66920L , AOB66935L , AOB780A70L , AOTL095A60 , AOTL125A60 , AOTL130A60FD , AOTL160A60 , IRF630 , AOTL42A60E , AOTL66215 , AOTL66401 , AOTL66515 , AOTL66518 , AOTL66608 , AOTL66610 , AOTL66810 .

Keywords - AOTL190A60 MOSFET datasheet

 AOTL190A60 cross reference
 AOTL190A60 equivalent finder
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