AOTL66610 Datasheet and Replacement
Type Designator: AOTL66610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 350 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 2145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: TOLLA
AOTL66610 substitution
AOTL66610 Datasheet (PDF)
aotl66610.pdf

AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66608.pdf

AOTL66608TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66215.pdf

AOTL66215TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
aotl66810.pdf

AOTL66810TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)
Datasheet: AOTL160A60 , AOTL190A60 , AOTL42A60E , AOTL66215 , AOTL66401 , AOTL66515 , AOTL66518 , AOTL66608 , IRF4905 , AOTL66810 , AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 .
History: HGS090N06SL | PMPB30XPE | SMG2330N | SHD225502 | DMP4047LFDE | SMG2329P | ME200N04T-G
Keywords - AOTL66610 MOSFET datasheet
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AOTL66610 equivalent finder
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History: HGS090N06SL | PMPB30XPE | SMG2330N | SHD225502 | DMP4047LFDE | SMG2329P | ME200N04T-G



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