AOTL66610 Specs and Replacement

Type Designator: AOTL66610

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 272 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 350 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 2145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: TOLLA

AOTL66610 substitution

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AOTL66610 datasheet

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AOTL66610

AOTL66610 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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aotl66608.pdf pdf_icon

AOTL66610

AOTL66608 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:379K  aosemi
aotl66215.pdf pdf_icon

AOTL66610

AOTL66215 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:369K  aosemi
aotl66810.pdf pdf_icon

AOTL66610

AOTL66810 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOTL160A60, AOTL190A60, AOTL42A60E, AOTL66215, AOTL66401, AOTL66515, AOTL66518, AOTL66608, IRF4905, AOTL66810, AOTL66810Q, AOTL66811, AOTL66912, AOTL66912Q, AOTL66914, AOTL66915, AOTL66918

Keywords - AOTL66610 MOSFET specs

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