AOTL66610 Datasheet and Replacement
Type Designator: AOTL66610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 350 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 2145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: TOLLA
- MOSFET Cross-Reference Search
AOTL66610 Datasheet (PDF)
aotl66610.pdf

AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66608.pdf

AOTL66608TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66215.pdf

AOTL66215TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
aotl66810.pdf

AOTL66810TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L
Keywords - AOTL66610 MOSFET datasheet
AOTL66610 cross reference
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History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L



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