All MOSFET. AOTL66912Q Datasheet

 

AOTL66912Q Datasheet and Replacement


   Type Designator: AOTL66912Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 370 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 3190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TOLLA
 

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AOTL66912Q Datasheet (PDF)

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AOTL66912Q

AOTL66912QTM100V N-Channel AlphaSGTAEC-Q101 QualifiedGeneral Description Product SummaryVDS100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)

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AOTL66912Q

AOTL66912TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operatingarea (SOA) RDS(ON) (at VGS=10V)

 6.1. Size:375K  aosemi
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AOTL66912Q

AOTL66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:494K  aosemi
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AOTL66912Q

AOTL66915TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339Ashorter down time RDS(ON) (at VGS=10V)

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Datasheet: AOTL66515 , AOTL66518 , AOTL66608 , AOTL66610 , AOTL66810 , AOTL66810Q , AOTL66811 , AOTL66912 , 2SK3568 , AOTL66914 , AOTL66915 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 .

History: PE532DY | OSG60R1K8PF

Keywords - AOTL66912Q MOSFET datasheet

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