All MOSFET. AOTL66912Q Datasheet

 

AOTL66912Q Datasheet and Replacement


   Type Designator: AOTL66912Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 370 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 3190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TOLLA
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AOTL66912Q Datasheet (PDF)

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AOTL66912Q

AOTL66912QTM100V N-Channel AlphaSGTAEC-Q101 QualifiedGeneral Description Product SummaryVDS100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)

 5.1. Size:658K  aosemi
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AOTL66912Q

AOTL66912TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operatingarea (SOA) RDS(ON) (at VGS=10V)

 6.1. Size:375K  aosemi
 aotl66914.pdf pdf_icon

AOTL66912Q

AOTL66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:494K  aosemi
 aotl66915.pdf pdf_icon

AOTL66912Q

AOTL66915TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339Ashorter down time RDS(ON) (at VGS=10V)

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFE130 | UT8205A | PSMN8R5-100ES | STP4N40FI | DMN2075UDW | SIR414DP | WML11N80M3

Keywords - AOTL66912Q MOSFET datasheet

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