AOTL66912Q Specs and Replacement

Type Designator: AOTL66912Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 370 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 3190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: TOLLA

AOTL66912Q substitution

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AOTL66912Q datasheet

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AOTL66912Q

AOTL66912Q TM 100V N-Channel AlphaSGT AEC-Q101 Qualified General Description Product Summary VDS 100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V) ... See More ⇒

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AOTL66912Q

AOTL66912 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operating area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

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 aotl66914.pdf pdf_icon

AOTL66912Q

AOTL66914 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aotl66915.pdf pdf_icon

AOTL66912Q

AOTL66915 TM 100V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339A shorter down time RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOTL66515, AOTL66518, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q, AOTL66811, AOTL66912, 4435, AOTL66914, AOTL66915, AOTL66918, AOTS21115C, AOTS21311C, AOTS21313C, AOTS21319C, AOTS26108

Keywords - AOTL66912Q MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.