FQPF5N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQPF5N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 51 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
Package: TO220F
FQPF5N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQPF5N90 Datasheet (PDF)
1.1. fqpf5n90.pdf 
Size:665K _fairchild_semi
September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has been especiall
4.1. fqp5n50c fqpf5n50c.pdf Size:879K _fairchild_semi
TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to • Fast switchi
4.2. fqp5n60c fqpf5n60c.pdf Size:858K _fairchild_semi
TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to • Fast swi
4.3. fqpf5n50cf.pdf Size:657K _fairchild_semi
TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 18nC) DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- • Fast switching m
4.4. fqpf5n60c.pdf Size:1159K _fairchild_semi
December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been
4.5. fqpf5n40.pdf Size:728K _fairchild_semi
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology has been especially t
4.6. fqpf5n50c.pdf Size:879K _fairchild_semi
TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to â
Datasheet: FDP8442_F085 , FQPF3N80C , FDMS8680 , FQPF45N15V2 , FQPF47P06 , FQPF4N90C , FQPF5N40 , FDD26AN06_F085 , IRFZ24N , FQPF5P20 , FQPF630 , FDMC8296 , FQPF65N06 , FQPF6N80C , FDMS8880 , FQPF6N80T , FDH50N50 .
