AOTL66915 Datasheet and Replacement
Type Designator: AOTL66915
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 428 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 339 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 3220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: TOLLA
AOTL66915 substitution
AOTL66915 Datasheet (PDF)
aotl66915.pdf

AOTL66915TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339Ashorter down time RDS(ON) (at VGS=10V)
aotl66912q.pdf

AOTL66912QTM100V N-Channel AlphaSGTAEC-Q101 QualifiedGeneral Description Product SummaryVDS100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)
aotl66912.pdf

AOTL66912TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operatingarea (SOA) RDS(ON) (at VGS=10V)
aotl66914.pdf

AOTL66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOTL66608 , AOTL66610 , AOTL66810 , AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q , AOTL66914 , SPP20N60C3 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C .
History: APTC90H12SCTG
Keywords - AOTL66915 MOSFET datasheet
AOTL66915 cross reference
AOTL66915 equivalent finder
AOTL66915 lookup
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History: APTC90H12SCTG



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