AOTS21311C MOSFET Datasheet: P-Ch, 30V, 5.9A. Full specification with pinout and replacement list

AOTS21311C Specs and Replacement

Type Designator: AOTS21311C

Marking Code: K4*

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V

Qg ⓘ - Total Gate Charge: 13.5 nC

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 80 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TSOP-6L

AOTS21311C substitution

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AOTS21311C datasheet

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AOTS21311C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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AOTS21313C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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AOTS21319C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.7A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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AOTS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

Detailed specifications: AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 , AOTS21115C , AON7410 , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 .