All MOSFET. AOTS21311C Datasheet

 

AOTS21311C Datasheet and Replacement


   Type Designator: AOTS21311C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TSOP-6L
 

 AOTS21311C substitution

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AOTS21311C Datasheet (PDF)

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AOTS21311C

AOTS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V)

 6.1. Size:363K  aosemi
 aots21313c.pdf pdf_icon

AOTS21311C

AOTS21313C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V)

 6.2. Size:362K  aosemi
 aots21319c.pdf pdf_icon

AOTS21311C

AOTS21319C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.7A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.1. Size:611K  aosemi
 aots21115c.pdf pdf_icon

AOTS21311C

AOTS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V)

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Datasheet: AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 , AOTS21115C , RFP50N06 , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 .

History: UT9435H | 2SK1567 | AP3A010MT | AON6230 | ME35N10-G | HM6620 | CEB6036

Keywords - AOTS21311C MOSFET datasheet

 AOTS21311C cross reference
 AOTS21311C equivalent finder
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