AOTS21311C Datasheet. Specs and Replacement
Type Designator: AOTS21311C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TSOP-6L
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AOTS21311C substitution
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AOTS21311C datasheet
aots21311c.pdf
AOTS21311C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aots21313c.pdf
AOTS21313C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aots21319c.pdf
AOTS21319C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.7A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aots21115c.pdf
AOTS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒
Detailed specifications: AOTL66810Q, AOTL66811, AOTL66912, AOTL66912Q, AOTL66914, AOTL66915, AOTL66918, AOTS21115C, AON6380, AOTS21313C, AOTS21319C, AOTS26108, AOTS32334C, AOTS32338C, AOTE21115C, AOTE32136C, AOUS66414
Keywords - AOTS21311C MOSFET specs
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