All MOSFET. AOTS21319C Datasheet

 

AOTS21319C MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTS21319C
   Marking Code: KC*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TSOP-6L

 AOTS21319C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTS21319C Datasheet (PDF)

 ..1. Size:362K  aosemi
 aots21319c.pdf

AOTS21319C AOTS21319C

AOTS21319C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.7A Low Gate Charge RDS(ON) (at VGS=-10V)

 6.1. Size:363K  aosemi
 aots21313c.pdf

AOTS21319C AOTS21319C

AOTS21313C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V)

 6.2. Size:375K  aosemi
 aots21311c.pdf

AOTS21319C AOTS21319C

AOTS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.1. Size:611K  aosemi
 aots21115c.pdf

AOTS21319C AOTS21319C

AOTS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top