AOTS21319C Specs and Replacement
Type Designator: AOTS21319C
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TSOP-6L
AOTS21319C substitution
- MOSFET ⓘ Cross-Reference Search
AOTS21319C datasheet
aots21319c.pdf
AOTS21319C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.7A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aots21313c.pdf
AOTS21313C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aots21311c.pdf
AOTS21311C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aots21115c.pdf
AOTS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒
Detailed specifications: AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , 5N65 , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 .
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