AOTS32338C PDF and Equivalents Search

 

AOTS32338C Specs and Replacement


   Type Designator: AOTS32338C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TSOP-6L
 

 AOTS32338C substitution

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AOTS32338C datasheet

 ..1. Size:332K  aosemi
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AOTS32338C

AOTS32338C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 3.8A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:328K  aosemi
aots32334c.pdf pdf_icon

AOTS32338C

AOTS32334C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOTL66915 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AON6380 , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 .

Keywords - AOTS32338C MOSFET specs

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