All MOSFET. AOTS32338C Datasheet

 

AOTS32338C Datasheet and Replacement


   Type Designator: AOTS32338C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TSOP-6L
 

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AOTS32338C Datasheet (PDF)

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AOTS32338C

AOTS32338C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 3.8A Low Gate Charge RDS(ON) (at VGS=10V)

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AOTS32338C

AOTS32334C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AOTL66915 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , IRLZ44N , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 .

History: IRHMJ57260SE | SPP03N60C3 | OSG80R140KF | CJQ4406 | TSM2312CX | 2N7002NXBK | 2SJ652-1E

Keywords - AOTS32338C MOSFET datasheet

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