AOUS66616 Datasheet and Replacement
Type Designator: AOUS66616
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 92.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 92 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15.5 nS
Cossⓘ - Output Capacitance: 940 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: ULTRASO-8L
AOUS66616 substitution
AOUS66616 Datasheet (PDF)
aous66616.pdf

AOUS66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aous66620.pdf

AOUS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aous66414.pdf

AOUS66414TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aous66920.pdf

AOUS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 69A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , 20N50 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C .
History: P3003EDG
Keywords - AOUS66616 MOSFET datasheet
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History: P3003EDG



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