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AOUS66616 PDF Specs and Replacement


   Type Designator: AOUS66616
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 92.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: ULTRASO-8L
 

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AOUS66616 PDF Specs

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AOUS66616

AOUS66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:758K  aosemi
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AOUS66616

AOUS66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:707K  aosemi
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AOUS66616

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 8.2. Size:771K  aosemi
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AOUS66616

AOUS66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 69A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , STP80NF70 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C .

Keywords - AOUS66616 MOSFET specs

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