FXN0607CN PDF Specs and Replacement
Type Designator: FXN0607CN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 63.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 272 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220A
FXN0607CN substitution
FXN0607CN PDF Specs
fxn0607cn.pdf
FuXin Semiconductor Co., Ltd. FXN0607CN Series Rev.A General Description Features The FXN0607CN uses advanced Silicon s MOSFET Technology, which VDS =70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic... See More ⇒
fxn0603d.pdf
FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒
fxn06s085c.pdf
FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.A General Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON) ... See More ⇒
Detailed specifications: AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , 4N60 , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C .
Keywords - FXN0607CN MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
