All MOSFET. FXN0607CN Datasheet

 

FXN0607CN Datasheet and Replacement


   Type Designator: FXN0607CN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 63.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 272 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220A
 

 FXN0607CN substitution

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FXN0607CN Datasheet (PDF)

 ..1. Size:956K  cn fx-semi
 fxn0607cn.pdf pdf_icon

FXN0607CN

FuXin Semiconductor Co., Ltd.FXN0607CN Series Rev.AGeneral Description FeaturesThe FXN0607CN uses advanced Silicon s MOSFET Technology, whichVDS =70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applic

 8.1. Size:316K  cn fx-semi
 fxn0603d.pdf pdf_icon

FXN0607CN

FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.1. Size:983K  cn fx-semi
 fxn06s085c.pdf pdf_icon

FXN0607CN

FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.AGeneral Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

Datasheet: AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , 2SK3568 , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C .

Keywords - FXN0607CN MOSFET datasheet

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