FXN0607CN Datasheet and Replacement
Type Designator: FXN0607CN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 63.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 272 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220A
FXN0607CN Datasheet (PDF)
fxn0607cn.pdf

FuXin Semiconductor Co., Ltd.FXN0607CN Series Rev.AGeneral Description FeaturesThe FXN0607CN uses advanced Silicon s MOSFET Technology, whichVDS =70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applic
fxn0603d.pdf

FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn06s085c.pdf

FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.AGeneral Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)
Datasheet: AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , 10N65 , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C .
Keywords - FXN0607CN MOSFET datasheet
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