FXN0607CN Datasheet. Specs and Replacement
Type Designator: FXN0607CN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 63.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 272 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220A
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FXN0607CN datasheet
fxn0607cn.pdf
FuXin Semiconductor Co., Ltd. FXN0607CN Series Rev.A General Description Features The FXN0607CN uses advanced Silicon s MOSFET Technology, which VDS =70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic... See More ⇒
fxn0603d.pdf
FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒
fxn06s085c.pdf
FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.A General Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON) ... See More ⇒
Detailed specifications: AOTE32136C, AOUS66414, AOUS66416, AOUS66616, AOUS66620, AOUS66920, AOUS66923, FXN0603D, IRFP250, FXN06S085C, FXN0703D, FXN0704C, FXN0406H, FXN0503D, FXN0504D, FXN0507C, FXN0305C
Keywords - FXN0607CN MOSFET specs
FXN0607CN cross reference
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