All MOSFET. FXN0406C Datasheet

 

FXN0406C Datasheet and Replacement


   Type Designator: FXN0406C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

 FXN0406C substitution

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FXN0406C Datasheet (PDF)

 ..1. Size:274K  cn fx-semi
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FXN0406C

FuXin Semiconductor Co., Ltd. FXN0406C Series Rev.A Features General Description VDS = 60V ID = 180A @VGS = 10V The FXN0406C uses advanced Silicon s MOSFET Technology, which Very low on-resistance provides high performance in on-state resistance, fast switching RDS(ON)

 7.1. Size:406K  cn fx-semi
 fxn0406h.pdf pdf_icon

FXN0406C

FuXin Semiconductor Co., Ltd. FXN0406H Rev.A General Description Features The FXN0406H uses advanced Silicons MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 180A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

 8.1. Size:289K  cn fx-semi
 fxn0404c.pdf pdf_icon

FXN0406C

FuXin Semiconductor Co., Ltd. FXN0404C Series Rev.A General Description Features The FXN0404C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:918K  cn fx-semi
 fxn0405c.pdf pdf_icon

FXN0406C

FuXin Semiconductor Co., Ltd. FXN0405C Series Rev.A General Description Features The FXN0405C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 206A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - FXN0406C MOSFET datasheet

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