FXN0406C. Аналоги и основные параметры

Наименование производителя: FXN0406C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 140 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 170 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 80 ns

Cossⓘ - Выходная емкость: 470 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm

Тип корпуса: TO220

Аналог (замена) для FXN0406C

- подборⓘ MOSFET транзистора по параметрам

 

FXN0406C даташит

 ..1. Size:274K  cn fx-semi
 fxn0406c.pdf pdf_icon

FXN0406C

FuXin Semiconductor Co., Ltd. FXN0406C Series Rev.A Features General Description VDS = 60V ID = 180A @VGS = 10V The FXN0406C uses advanced Silicon s MOSFET Technology, which Very low on-resistance provides high performance in on-state resistance, fast switching RDS(ON)

 7.1. Size:406K  cn fx-semi
 fxn0406h.pdf pdf_icon

FXN0406C

FuXin Semiconductor Co., Ltd. FXN0406H Rev.A General Description Features The FXN0406H uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 180A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

 8.1. Size:289K  cn fx-semi
 fxn0404c.pdf pdf_icon

FXN0406C

FuXin Semiconductor Co., Ltd. FXN0404C Series Rev.A General Description Features The FXN0404C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:918K  cn fx-semi
 fxn0405c.pdf pdf_icon

FXN0406C

FuXin Semiconductor Co., Ltd. FXN0405C Series Rev.A General Description Features The FXN0405C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 206A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FXN0704C, FXN0406H, FXN0503D, FXN0504D, FXN0507C, FXN0305C, FXN0404C, FXN0405C, IRF520, FXN0205C, FXN0206C, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P