FXN9N90F MOSFET Datasheet: N-Ch, 900V, 8.4A. Full specification with pinout and replacement list

FXN9N90F Specs and Replacement

   Type Designator: FXN9N90F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 396 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F

FXN9N90F substitution

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FXN9N90F datasheet

..1. Size:741K cn fx-semi
fxn9n90f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN9N90F Series Rev.A General Description Features The FXN9N90F uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

7.1. Size:797K cn fx-semi
fxn9n90p.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

9.1. Size:464K cn fx-semi
fxn9n50f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN9N50F Series Rev.A General Description Features The FXN9N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

9.2. Size:598K cn fx-semi
fxn9n20c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.A General Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒