All MOSFET. FXN9N90F Datasheet

 

FXN9N90F Datasheet and Replacement


   Type Designator: FXN9N90F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 41.5 nC
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 396 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
 

 FXN9N90F substitution

   - MOSFET ⓘ Cross-Reference Search

 

FXN9N90F Datasheet (PDF)

 ..1. Size:741K  cn fx-semi
fxn9n90f.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd. FXN9N90F Series Rev.A General Description Features The FXN9N90F uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 7.1. Size:797K  cn fx-semi
fxn9n90p.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.1. Size:464K  cn fx-semi
fxn9n50f.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

 9.2. Size:598K  cn fx-semi
fxn9n20c.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.AGeneral Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - FXN9N90F MOSFET datasheet

 FXN9N90F cross reference
 FXN9N90F equivalent finder
 FXN9N90F lookup
 FXN9N90F substitution
 FXN9N90F replacement

 

 
Back to Top

 


 
.