FXN9N90F. Аналоги и основные параметры

Наименование производителя: FXN9N90F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 68 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.4 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 42 ns

Cossⓘ - Выходная емкость: 396 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm

Тип корпуса: TO220F

Аналог (замена) для FXN9N90F

- подборⓘ MOSFET транзистора по параметрам

 

FXN9N90F даташит

 ..1. Size:741K  cn fx-semi
 fxn9n90f.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd. FXN9N90F Series Rev.A General Description Features The FXN9N90F uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 7.1. Size:797K  cn fx-semi
 fxn9n90p.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.1. Size:464K  cn fx-semi
 fxn9n50f.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd. FXN9N50F Series Rev.A General Description Features The FXN9N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.2. Size:598K  cn fx-semi
 fxn9n20c.pdf pdf_icon

FXN9N90F

FuXin Semiconductor Co., Ltd. FXN9N20C Series Rev.A General Description Features The FXN9N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 9 A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FXN0405C, FXN0406C, FXN0205C, FXN0206C, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F, 75N75, FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C, FXN0707C